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Proceedings Paper

Progress in planarized vertical-cavity surface-emitting laser devices and arrays
Author(s): Robert A. Morgan; Leo M. F. Chirovsky; Marlin W. Focht; Gregory D. Guth; Moses T. Asom; Ronald E. Leibenguth; K. Cyrus Robinson; Yong-Hee Lee; Jack L. Jewell
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Paper Abstract

We report batch-processed, totally planar, vertical-cavity top surface emitting GaAs/AlGaAs laser devices and arrays. Different size devices are studied experimentally. We measure continuous-wave threshold currents down to 1.7 mA and output powers > 3.7 mW at room temperature. We also discuss interesting characteristics such as differential quantum efficiencies exceeding unity and multi-transverse mode behavior. An array having 64 X 1 individually-accessed elements is characterized and shown to have uniform room-temperature continuous-wave operating characteristics in threshold current approximately equals 2.1 +/- 0.1 mA, wavelength approximately equals 849.4 +/- 0.8 nm, and output power approximately equals 0.5 +/- 0.1 mW.

Paper Details

Date Published: 1 December 1991
PDF: 11 pages
Proc. SPIE 1562, Devices for Optical Processing, (1 December 1991); doi: 10.1117/12.50792
Show Author Affiliations
Robert A. Morgan, AT&T Bell Labs. (United States)
Leo M. F. Chirovsky, AT&T Bell Labs. (United States)
Marlin W. Focht, AT&T Bell Labs. (United States)
Gregory D. Guth, AT&T Bell Labs. (United States)
Moses T. Asom, AT&T Bell Labs. (United States)
Ronald E. Leibenguth, AT&T Bell Labs. (United States)
K. Cyrus Robinson, AT&T Bell Labs. (United States)
Yong-Hee Lee, KAIST (South Korea)
Jack L. Jewell, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 1562:
Devices for Optical Processing
Debra M. Gookin, Editor(s)

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