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Proceedings Paper

Influence of gate dielectrics on electrical properties of F8T2 polyfluorene thin film transistors
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Paper Abstract

The electrical properties of polymeric thin film transisitors (P-TFTs) based on poly(9,9-dioctylfluorene-co-bithiophene) alternating copolymer (F8T2) have been studied. Device performance was compared for amorphous silicon nitride deposited by LPCVD and PECVD techniques, aluminum oxide deposited by sputtering, titanium oxide deposited by sputtering, and thermal silicon oxide gate dielectrics. A heavily n-type doped crystalline silicon wafer coated with the desired gate dielectric was used. Photolithographic patterning of source/drain electrodes directly on top of the F8T2 layer is also discussed. The main conclusion from this work is that traps within the F8T2 define the conduction process within the device.

Paper Details

Date Published: 17 November 2003
PDF: 8 pages
Proc. SPIE 5217, Organic Field Effect Transistors II, (17 November 2003); doi: 10.1117/12.507630
Show Author Affiliations
James Swensen, Univ. of California/Santa Barbara (United States)
Jerzy Kanicki, Univ. of California/Santa Barbara (United States)
Alan J. Heeger, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 5217:
Organic Field Effect Transistors II
Christos D. Dimitrakopoulos, Editor(s)

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