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Proceedings Paper

KTP waveguides for frequency upconversion of strained-layer InGaAs laser diodes
Author(s): William P. Risk; Ch. K. Nadler
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Paper Abstract

KTP waveguides are being investigated for frequency upconversion of strained-layer InGaAs lasers in the 900 - 1100 nm range. Phasematching for the lowest-order mode interaction can be obtained using the modal dispersion properties of these diffused waveguides and modeling calculations have been used to determine the waveguide parameters required for phasematching to occur at a particular wavelength. Ion-exchange in pure RbNO3 has been used to form a waveguide that permits phasematched frequency doubling at wavelengths near 1040 nm.

Paper Details

Date Published: 1 December 1991
PDF: 5 pages
Proc. SPIE 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion, (1 December 1991); doi: 10.1117/12.50760
Show Author Affiliations
William P. Risk, IBM/Almaden Research Ctr. (United States)
Ch. K. Nadler, IBM/Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1561:
Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion
Peter F. Bordui, Editor(s)

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