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Proceedings Paper

Nature of nonlinearity of I-V characteristics in CdTe:Cl single crystals
Author(s): Andriy V. Sukach; Volodymyr V. Tetyorkin; Volodymyr D. Popovych; Volodymyr M. Popov
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Paper Abstract

The current-voltage characteristics are investigated in single crystals of CdTe doped with Cl. Measured samples were ntype conductivity with resistivity ρ=(0.5-2.0)×108 Ohm×cm, electron concentration n=(0.5÷2.0)×108 cm-3 and electron mobility μ=280÷300 cm2/Vxs. Experimental data are explained in the framework of theory of highly doped and highly compensated (HDHC) semiconductors. The mobility-lifetime product measured at room temperature is found to be of the order of (1÷5)x 10-4 cm2xV-1. It means that this material can be used for manufacture of X-ray detectors.

Paper Details

Date Published: 20 January 2004
PDF: 9 pages
Proc. SPIE 5198, Hard X-Ray and Gamma-Ray Detector Physics V, (20 January 2004); doi: 10.1117/12.507424
Show Author Affiliations
Andriy V. Sukach, Institute of Semiconductor Physics (Ukraine)
Volodymyr V. Tetyorkin, Institute of Semiconductor Physics (Ukraine)
Volodymyr D. Popovych, Ivan Franko State Pedagogical Univ. (Ukraine)
Volodymyr M. Popov, Physical and Technological Research and Certification Ctr. Microanalitics (Ukraine)


Published in SPIE Proceedings Vol. 5198:
Hard X-Ray and Gamma-Ray Detector Physics V
Larry A. Franks; Arnold Burger; Ralph B. James; Paul L. Hink, Editor(s)

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