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Proceedings Paper

Multilayer-coated photodiodes with polarization sensitivity at EUV wavelength
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Paper Abstract

The design of Mo/Si and Mo/Y multilayers as EUV polarizers is presented. The polarization performance of these multilayers was calculated based on their optical properties at around Brewster angles. The polarization results of a silicon photodiode that was coated with an interface-engineered Mo/Si multilayer are described. The sensitivity of this specially-coated photodiode and its polarization responses were determined from both reflectance and transmittance of the multilayer coating, using synchrotron radiation. The multilayer reflected 69.8% of s-polarized light and only 2.4% of p-polarized light, therefore transmitted about 0.2% s-polarized light and 8.4% p-polarized light at 13.5 nm to the underlying photodiode substrate. A polarization ratio based on transmittance values, (Tp-Ts)/(Tp+Ts), of 95% was achieved with sufficiently high sensitivity. This result demonstrates the usefulness of Mo/Si multilayer-coated photodiodes as future EUV polarimeters.

Paper Details

Date Published: 29 January 2004
PDF: 4 pages
Proc. SPIE 5168, Optics for EUV, X-Ray, and Gamma-Ray Astronomy, (29 January 2004); doi: 10.1117/12.507115
Show Author Affiliations
Benjawan Kjornrattanawanich, Universities Space Research Association (United States)
Sasa Bajt, Lawrence Livermore National Lab. (United States)
John F. Seely, Naval Research Lab. (United States)


Published in SPIE Proceedings Vol. 5168:
Optics for EUV, X-Ray, and Gamma-Ray Astronomy
Oberto Citterio; Stephen L. O'Dell, Editor(s)

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