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Proceedings Paper

Deformation of silicon surfaces
Author(s): John C. Lambropoulos; Kang-Hua Chen; Theodore J. Lambropoulos
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Paper Abstract

Processing of semiconductors, including machining, grinding, or polishing, involves thermomechanical deformation of a thin surface layer, thus coupling temperature and stress fields. Si, Ge, and other III-V semiconductors, exhibit complex constitutive laws coupling mechanical deformation with an evolving microstructure, typically dislocation density or coordination number. Irreversible shear flow and phase transitions are induced by combined stresses and temperatures. We discuss constitutive laws applicable to the machining of silicon.

Paper Details

Date Published: 12 December 2003
PDF: 12 pages
Proc. SPIE 5179, Optical Materials and Structures Technologies, (12 December 2003); doi: 10.1117/12.506332
Show Author Affiliations
John C. Lambropoulos, Univ. of Rochester (United States)
Kang-Hua Chen, Univ. of Rochester (United States)
Theodore J. Lambropoulos, Pittsford-Mendon High School (United States)

Published in SPIE Proceedings Vol. 5179:
Optical Materials and Structures Technologies
William A. Goodman, Editor(s)

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