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Fabrication and characteristics of nonequilibrium VLWIR detectors with HgTe/CdTe superlattice active regions
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Paper Abstract

P+-v-N+ structures with HgTe/CdTe superlattice absorber regions were grown by MBE to give cut-off wavelengths in the very long wavelength infrared (14 μm and longer) at temperatures below 80 K. The superlattice period of one sample was 98.3Å according to its x-ray diffraction profile, very close the intended 98.5Å for a 48.5Å HgTe/50.Å Hg0.05Cd0.95Te superlattice. The cut-off wavelengths of another sample were approximately 14 and 18 μm at 77 and 40K, respectively, as determined by optical absorption and spectral response measurements. A first batch of devices annealed at 150°C or 180°C for 1 hr after the deposition of 50Å thick gold films showed relatively low R0A values (approximately 0.3 ohm-cm2). This was interpreted to be due to the formation of a junction near the boundary of the superlattice and a high carrier concentration region of HgCdTe alloy. A second batch of devices was annealed at 120°C for 1 hr or 5 min. to decrease the gold diffusion depth. The electrical properties showed higher R0A values (approximately 8 ohm-cm2). The detectivities of the second batch devices at 77K were in the range of 108 to 1010 cmHz½/W and showed frequency dependence because the noise had frequency dependence. We observe very low knee frequencies (below 10Hz) in their noise spectra.

Paper Details

Date Published: 8 December 2003
PDF: 15 pages
Proc. SPIE 5209, Materials for Infrared Detectors III, (8 December 2003); doi: 10.1117/12.506183
Show Author Affiliations
Tae-Seok Lee, Smart Pixel Inc. (United States)
Charles R. Becker, Univ. Wurzburg (Germany)
Christoph H. Grein, Smart Pixel Inc. (United States)
Sivalingam Sivananthan, Smart Pixel Inc. (United States)
Vaidya Nathan, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 5209:
Materials for Infrared Detectors III
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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