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Proceedings Paper

Growth of high-resistivity CdTe and (Cd,Zn)Te crystals
Author(s): Michael Fiederle; Alex Fauler; Vladimir Babentsov; J. P. Konrath; Jan Franc
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Paper Abstract

CdTe and (Cd,Zn)Te high resistivity crystals were grown by the Vertical Bridgman method with diameters from 25 mm up to 75 mm. Different dopants had been applied to obtain resistivities of 5 x 108 Ωcm up to 2 x 1010 Ωcm and 3 x 10-3 cm2/V for the mobility-lifetime product for electrons for the indium doped material.

Paper Details

Date Published: 20 January 2004
PDF: 6 pages
Proc. SPIE 5198, Hard X-Ray and Gamma-Ray Detector Physics V, (20 January 2004); doi: 10.1117/12.506032
Show Author Affiliations
Michael Fiederle, Albert-Ludwigs-Univ. Freiburg (Germany)
Alex Fauler, Albert-Ludwigs-Univ. Freiburg (Germany)
Vladimir Babentsov, Albert-Ludwigs-Univ. Freiburg (Germany)
J. P. Konrath, Albert-Ludwigs-Univ. Freiburg (Germany)
Jan Franc, Albert-Ludwigs-Univ. Freiburg (Germany)

Published in SPIE Proceedings Vol. 5198:
Hard X-Ray and Gamma-Ray Detector Physics V
Larry A. Franks; Arnold Burger; Ralph B. James; Paul L. Hink, Editor(s)

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