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Phonons and polaritons in semiconductor layer structures
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Paper Abstract

This work presents a spectroscopic ellipsometry study of phonon and polariton modes in zincblende group-III-group-V semiconductor layer structures. Contributions to the dielectric function due to infrared-active polar phonon modes and coupled longitudinal-phonon-plasmon modes are differentiated and quantified upon model lineshape analysis. Interface Fano-, Brewster- and surface-guided modes are assigned upon solution of the surface polariton dispersion relation for layered structures, and addressed by experiment. We explain the physical origin of the Berreman-effect.

Paper Details

Date Published: 9 July 2003
PDF: 13 pages
Proc. SPIE 5218, Complex Mediums IV: Beyond Linear Isotropic Dielectrics, (9 July 2003); doi: 10.1117/12.505863
Show Author Affiliations
Mathias Schubert, Univ. Leipzig (Germany)
Tino Hofmann, Univ. Leipzig (Germany)

Published in SPIE Proceedings Vol. 5218:
Complex Mediums IV: Beyond Linear Isotropic Dielectrics
Martin W. McCall; Graeme Dewar, Editor(s)

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