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Proceedings Paper

Low-voltage operation of the organic thin film transistor with a diagonal configuration
Author(s): Toshihide Kamata; Manabu Yoshida; Sei Uemura; Satoshi Hoshino; Noriyuki Takada; Takehito Kodzasa
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Paper Abstract

In order to develop a printable organic thin film transistor with high performance, it is required to develop not only printable materials and a printing process but also a suitable device structure for it. We have newly designed an organic field effect transistor with a diagonal configuration of source and drain electrode, named as the Top and bottom contact (TBC) configuration. It has several advantages due to its unique structure. For example, it can be prepared by a simple stacking process without any micro-machining process or related photolithography procedures. This is thus suitable for applying the simple printing technique such as a screen-printing. In the proposed structure, source and drain electrodes are arranged diagonally across the active layer. Therefore, the channel length can be controlled by the deposited active layer thickness. In this study, we have prepared the pentacene transistor with the TBC configuration. By inserting the extra insulator layer, leakage current between the top and bottom electrode was remarkably reduced. The output current density was about two orders larger than the conventional organic transistor with a top contact configuration. These high performances are mainly due to the improvement of the carrier injection efficiency owing to the short channel length (ca.0.5μm).

Paper Details

Date Published: 17 November 2003
PDF: 8 pages
Proc. SPIE 5217, Organic Field Effect Transistors II, (17 November 2003); doi: 10.1117/12.505727
Show Author Affiliations
Toshihide Kamata, National Institute of Advanced Industrial Science and Technology - AIST (Japan)
Manabu Yoshida, National Institute of Advanced Industrial Science and Technology - AIST (Japan)
Sei Uemura, National Institute of Advanced Industrial Science and Technology - AIST (Japan)
Satoshi Hoshino, National Institute of Advanced Industrial Science and Technology - AIST (Japan)
Noriyuki Takada, National Institute of Advanced Industrial Science and Technology - AIST (Japan)
Takehito Kodzasa, National Institute of Advanced Industrial Science and Technology - AIST (Japan)


Published in SPIE Proceedings Vol. 5217:
Organic Field Effect Transistors II
Christos D. Dimitrakopoulos, Editor(s)

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