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Proceedings Paper

Enhanced reflectivity and stability of Sc/Si multilayers
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Paper Abstract

Sc/Si multilayers were designed for normal incidence reflectivity in the wavelength range from 35 to 50 nm and were deposited by dc-magnetron sputtering. X-ray scattering of CuKα radiation, transmission electron microscopy, atomic force microscopy and chemical analysis were used for the characterization of the multilayer structures. The normal incidence reflectivity was measured as a function of the wavelength, for different layer thickness ratios, number of layers and some important sputter parameters. Maximum reflectivities of 21% @ 38 nm and 54 % @ 46 nm for Sc/Si multilayer mirrors were achieved. Reflectivity up to 56 % @ 44.7 nm for a Sc/Si multilayers having enhanced interface structure due to Cr diffusion barriers will be under discussion. The increase in reflectivity is consistent with multilayers having sharper and smoother interfaces. The evolutions of optical properties in the temperature range from 50°C to 250°C for classical Sc/Si and interface engineered Sc/Cr/Si/Cr multilayers will be compared.

Paper Details

Date Published: 13 January 2004
PDF: 9 pages
Proc. SPIE 5193, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications, (13 January 2004); doi: 10.1117/12.505582
Show Author Affiliations
Sergiy A. Yulin, Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik (Germany)
Franz Schaefers, BESSY GmbH (Germany)
Torsten Feigl, Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik (Germany)
Norbert Kaiser, Fraunhofer-Institut fuer Angewandte Optik und Feinmechanik (Germany)


Published in SPIE Proceedings Vol. 5193:
Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications
Ali M. Khounsary; Udo Dinger; Kazuya Ota, Editor(s)

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