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Proceedings Paper

Organic-inorganic field effect transistor with SnI-based perovskite channel layer using vapor phase deposition technique
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Paper Abstract

High field-effect hole mobility of (formula available in paper)and threshold voltage is -3.2 V) in organic-inorganic layered perovskite film (formula available in paper)prepared by a vapor phase deposition technique have been demonstrated through the octadecyltrichlorosilane treatment of substrate. Previously, the (formula available in paper)films prepared on the octadecyltrichlorosilane-covered substrates using a vapor evaporation showed not only intense exciton absorption and photoluminescence in the optical spectroscopy but also excellent crystallinity and large grain structure in X-ray and atomic force microscopic studies. Especially, the (formula available in paper)structure in the region below few nm closed to the surface of octadecyltrichlorosilane monolayer was drastically improved in comparison with that on the non-covered substrate. Though our initial (formula available in paper)films via a same sequence of preparation of (formula available in paper)and octadecyltrichlorosilane monolayer did not show the field-effect properties because of a lack of spectral, structural, and morphological features. The unformation of favorable (formula available in paper)structure in the very thin region, that is very important for the field-effect transistors to transport electrons or holes, closed to the surface of non-covered (formula available in paper)dielectric layer was also one of the problems for no observation of them. By adding further optimization and development, such as deposition rate of perovskite, substrate heating during deposition, and tuning device architecture, with hydrophobic treatment, the vacuum-deposited (formula available in paper)have achieved above-described high performance in organic-inorganic hybrid transistors.

Paper Details

Date Published: 17 November 2003
PDF: 12 pages
Proc. SPIE 5217, Organic Field Effect Transistors II, (17 November 2003); doi: 10.1117/12.505509
Show Author Affiliations
Toshinori Matsushima, Kyushu Univ. (Japan)
Takeshi Yasuda, Kyushu Univ. (Japan)
Katsuhiko Fujita, Kyushu Univ. (Japan)
Tetsuo Tsutsui, Kyushu Univ. (Japan)


Published in SPIE Proceedings Vol. 5217:
Organic Field Effect Transistors II
Christos D. Dimitrakopoulos, Editor(s)

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