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Proceedings Paper

Light scatter variations with respect to wafer orientation in GaAs
Author(s): Jeff L. Brown
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Paper Abstract

Attempting to determine the quality and uniformity of a smooth surface from examination of BRDF raster scans can be a risky business as evidenced by studies of commercially grown and polished GaAs wafers. To demonstrate this, raster scan variations with respect to wafer orientation are presented along with a method for analyzing these variations without the need for making multiple raster scans. Some possible sources of the orientational variations are indicated by the data.

Paper Details

Date Published: 1 December 1991
PDF: 7 pages
Proc. SPIE 1530, Optical Scatter: Applications, Measurement, and Theory, (1 December 1991); doi: 10.1117/12.50519
Show Author Affiliations
Jeff L. Brown, U.S. Air Force/Wright Lab. (United States)


Published in SPIE Proceedings Vol. 1530:
Optical Scatter: Applications, Measurement, and Theory
John C. Stover, Editor(s)

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