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Proceedings Paper

New criterion about the topography of W-CMP wafer's alignment mark
Author(s): Hideki Ina; Takahiro Matsumoto; Koichi Sentoku; Katsuhiro Matsuyama; Kazuhiko Katagiri
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Paper Abstract

Alignment error that originates in the actual wafer process is one of the factors to deteriorate total overlay accuracy. This error has been called wafer induced shift (WIS). WIS occurs through a change of alignment marks topography under the actual wafer processing. To quantify mark asymmetry WIS, we study the mark asymmetry on tungsten chemical mechanical polishing (CMP) wafers by using an atomic force microscope and define new criterion in this paper. The mark topography of CMP process wafers are measured by AFM and quantified using the new criterion. The asymmetry of the mark topography can be quantified by measuring the profiles of an alignment mark across the wafers. It has been proven, that the rotation error is caused by the asymmetry of the mark topography and the asymmetry is not related to the line width of the mark.

Paper Details

Date Published: 2 June 2003
PDF: 8 pages
Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.504579
Show Author Affiliations
Hideki Ina, Canon Inc. (Japan)
Takahiro Matsumoto, Canon Inc. (Japan)
Koichi Sentoku, Canon Inc. (Japan)
Katsuhiro Matsuyama, NihonVeeco (Japan)
Kazuhiko Katagiri, NihonVeeco (Japan)


Published in SPIE Proceedings Vol. 5038:
Metrology, Inspection, and Process Control for Microlithography XVII
Daniel J. Herr, Editor(s)

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