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Proceedings Paper

Single steady frequency and narrow-linewidth external-cavity semiconductor laser
Author(s): Weirui Zhao; Pengfei Jiang; Fuzeng Xie
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Paper Abstract

A single longitudinal mode and narrow line width external cavity semiconductor laser is proposed. It is constructed with a semiconductor laser, collimator, a flame grating, and current and temperature control systems. The one facet of semiconductor laser is covered by high transmission film, and another is covered by high reflection film. The flame grating is used as light feedback element to select the mode of the semiconductor laser. The temperature of the constructed external cavity semiconductor laser is stabilized in order of 10-3°C by temperature control system. The experiments have been carried out and the results obtained - the spectral line width of this laser is compressed to be less than 1.4MHz from its original line-width of more than 1200GHz and the output stability (including power and mode) is remarkably enhanced.

Paper Details

Date Published: 4 November 2003
PDF: 5 pages
Proc. SPIE 5188, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies, (4 November 2003); doi: 10.1117/12.504456
Show Author Affiliations
Weirui Zhao, Institute of Semiconductors (China)
Pengfei Jiang, Institute of Semiconductors (China)
Fuzeng Xie, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 5188:
Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies
Angela Duparre; Bhanwar Singh, Editor(s)

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