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Proceedings Paper

CTI distribution within a damaged CCD pixel having a notch structure
Author(s): Hiroshi Tsunemi; Masami Miki; Emi Miyata; Junko Hiraga; Kazuhisa Miyaguchi
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Paper Abstract

Radiation hardness is one of the most important aspect of a charge coupled device (CCD) working in the space environment. A notch structure is employed so that a charge packet is confined in a notch region within a pixel. We report here the effect of the ’notch structure’ inside the CCD that is designed to be radiation hard. Using a proton beam, we confirmed that the notch structure improved the charge transfer inefficiency (CTI) by a factor of 3. We applied a mesh technique in the proton beam experiment on a CCD. The CCD employed has 1024×1024 pixels with a notch structure. The mesh technique enables us to confine the proton beam of about 600 keV to a circular region of 2 μm diameter within a 24μm pixel. The total proton fluence is 2 × 109 protons/cm2 before the mesh that corresponds to 100 protons for each hole. Some pixels are damaged in the notch region while others in the out-of-notch region. After the proton irradiation, we measured the CTI for each pixel using X-rays from 55Fe. We found that the CTI of pixels damaged in the notch region is larger by a factor of 3 than that of pixels damaged in the out-of-notch region. We experimentally showed how the notch structure improved the CTI of the CCD.

Paper Details

Date Published: 20 January 2004
PDF: 8 pages
Proc. SPIE 5198, Hard X-Ray and Gamma-Ray Detector Physics V, (20 January 2004); doi: 10.1117/12.504309
Show Author Affiliations
Hiroshi Tsunemi, Osaka Univ. (Japan)
Masami Miki, Osaka Univ. (Japan)
Emi Miyata, Osaka Univ. (Japan)
Junko Hiraga, The Institute of Space and Astronautical Science (Japan)
Kazuhisa Miyaguchi, Hamamatsu Photonics K.K. (Japan)

Published in SPIE Proceedings Vol. 5198:
Hard X-Ray and Gamma-Ray Detector Physics V
Larry A. Franks; Arnold Burger; Ralph B. James; Paul L. Hink, Editor(s)

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