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Proceedings Paper

Pattern-dependence optical phase effect on alternating phase shift mask
Author(s): Bin-Chang Chang; Jan-Wen You; Ming Lu; Chiu-Lien Lee; Li-Wei Kung; King-Chang Shu; Jaw-Jung Shin; Tsai-Sheng Gau; Burn-Jeng Lin
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Paper Abstract

A comprehensive study of alternating phase shifting mask (Alt-PSM) including mask making, 3-dimensional aerial image simulation, and wafer printing is reported in this paper. For the mask making, we found that the micro-loading effect will be greatly improved using the etching recipe with high Reactive Ion Etching (RIE) power and low Inductively Coupled Plasma (ICP) power. However, this recipe has side effects of Cr film damage and rough quartz side wall. Due to the 3-dimensional mask complex effect, the optimal phase difference is not simply π calculated using optical path difference but is varied with mask features. The optimal phase difference is 165° other than 180° for hole patterns, while it is 176° for line-and-space patterns. The micro-loading effect with variant 2-dimensional complexities is also studied in this paper.

Paper Details

Date Published: 28 August 2003
PDF: 11 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504284
Show Author Affiliations
Bin-Chang Chang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jan-Wen You, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Ming Lu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chiu-Lien Lee, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Li-Wei Kung, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
King-Chang Shu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jaw-Jung Shin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tsai-Sheng Gau, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Burn-Jeng Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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