Share Email Print
cover

Proceedings Paper

Development of pellicle for F2(157-nm) excimer laser
Author(s): Shigeto Shigematsu; Toshihiko Nakano; H. Shigemoto; Masahiro Kondo; Hiroaki Nakagawa; H. Sasaki; Iwao Higashikawa
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Because 157 nm light energy is two or more times of C-C bonding energy, the main bonding of organic materials, pellicle membrane material decomposes if it absorbs light at 157 nm. Therefore, in order to ensure the durability of the pellicle membrane, it is very important that the membrane material absorbs 157 nm light as little as possible. We researched high transmittance polymers at 157 nm by using simulation technology. In conclusion, we estimated that polymers with high transmittance at 157 nm are possible, and several companies were asked to develop it. As a result, we obtained a polymer in which 157 nm transmittance is 98.5% at 0.8 um [157 nm absorbance is 0.008 um-1, 10 base] from Asahi Glass Co., Ltd. We carried out various 157 nm irradiation tests by using the above polymer, and obtained the result showing durability of 15 J/cm2 in nitrogen + 1000 ppm oxygen environment. Furthermore, we examined the environment during F2 Excimer Laser irradiation and found that transmittance loss of membrane and also oxygen addition quantity to irradiation environment may be improved substantially by adopting irradiation environment of Helium.

Paper Details

Date Published: 28 August 2003
PDF: 11 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504266
Show Author Affiliations
Shigeto Shigematsu, Mitsui Chemicals, Inc. (Japan)
Toshihiko Nakano, Mitsui Chemicals, Inc. (Japan)
H. Shigemoto, Mitsui Chemicals, Inc. (Japan)
Masahiro Kondo, Mitsui Chemicals, Inc. (Japan)
Hiroaki Nakagawa, Mitsui Chemicals, Inc. (Japan)
H. Sasaki, Semiconductor Leading Edge Technologies, Inc. (Japan)
Iwao Higashikawa, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

© SPIE. Terms of Use
Back to Top