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Proceedings Paper

Development of an e-beam lithography system for 100- to 90-nm node reticles
Author(s): Tadashi Komagata; Yuichi Kawase; Yasutoshi Nakagawa; Nobuo Gotoh; Kazumitsu Tanaka
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Paper Abstract

A new advanced electron beam lithography system JBX-3030MV has been developed to meet requirements for the production of masks for 100-90nm technology node. The system features a variable shaped beam, 50kV accelerating voltage, a step-and-repeat stage, and incorporates new technologies. These include a high resolution-high current density electron optical system, triangle beam shaping system, higher speed electro static beam deflection system, higher accuracy proximity effect correction system, and glass in glass out material handling system. The writing accuracy of the system has satisfied the specifications required for the production of 100-90nm node reticles with extendibility of 65nm node reticles.

Paper Details

Date Published: 28 August 2003
PDF: 11 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504261
Show Author Affiliations
Tadashi Komagata, JEOL Ltd. (Japan)
Yuichi Kawase, JEOL Ltd. (Japan)
Yasutoshi Nakagawa, JEOL Ltd. (Japan)
Nobuo Gotoh, JEOL Ltd. (Japan)
Kazumitsu Tanaka, JEOL Ltd. (Japan)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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