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Proceedings Paper

Impact of OPC aggressiveness on mask maufacturability
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Paper Abstract

In recent low-k1 lithography, OPC is required to generate more aggressively fragmented patterns to keep its pattern fidelity on the LSI devices. But over-aggressive OPC might induce a crisis of mask manufacturability. In this paper, using newly defined parameter, DPF (Degree of Pattern Fidelity), quantitative relations between OPC aggressiveness and pattern fidelity are evaluated under several conditions. Next, the concept of MEF is extended for 2D complex patterns using DPF, and is evaluated as a function of OPC aggressiveness. Other mask manufacturability, such as writing time, data volume, and inspection availability would be evaluated as a function of OPC aggressiveness.

Paper Details

Date Published: 28 August 2003
PDF: 10 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504253
Show Author Affiliations
Satoshi Tanaka, Toshiba Corp. (Japan)
Soichi Inoue, Toshiba Corp. (Japan)
Toshiya Kotani, Toshiba Corp. (Japan)
Kyoko Izuha, Toshiba Corp. (Japan)
Ichiro Mori, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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