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Proceedings Paper

LEEPL mask fabrication using SOI substrates
Author(s): Kenta Yotsui; Gaku Suzuki; Akira Tamura
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Paper Abstract

We have prepared 100-mm and 200-mm 1X stencil masks for low energy electron-beam proximity projection lithography (LEEPL) using silicon on insulator (SOI) substrates. We chose 200-mm without frame type format for production mask and 100-mm with NIST-like frame type for developing. And we employed COSMOS (complementary stencil masks on strut-supports) structure proposed by SONY to suppress in-plane distortion (IPD) of membrane. Our 100-mm mask contains 70-nm node device patterns. The critical dimension (CD) uniformity of a 100-nm width line patterns was 5.6 nm in range within 20-mm square area. The CD linearity of the line patterns was 5.5 nm in range throughout the range of 80- to 300-nm width. In our 200-mm mask, 100-nm width line patterns and 150-nm width hole patterns were successfully fabricated within 46-mm square area.

Paper Details

Date Published: 28 August 2003
PDF: 9 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504250
Show Author Affiliations
Kenta Yotsui, Toppan Printing Co., Ltd. (Japan)
Gaku Suzuki, Toppan Printing Co., Ltd. (Japan)
Akira Tamura, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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