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Proceedings Paper

Pattern inspection of EUV mask using an EUV microscope
Author(s): Takeo Watanabe; Tsuneyuki Haga; Tsutomu Shoki; Kazuhiro Hamamoto; Shintaro Takada; Naoki Kazui; Satoshi Kakunai; Harushige Tsubakino; Hiroo Kinoshita
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Paper Abstract

It is proposed that at-wavelength EUV mask inspection system based on EUV microscope, which is the best way to observe the mask directly. Using this system, preliminary experiments to examine the pattern inspection of EUVL mask is carried out. EUV microscope has a capability to resolve 50 nm lithographic node finished EUVL mask. We confirmed that at-wavelength microscope rather than SEM is both powerful and useful for evaluating the mask fabrication process for EUVL. Furthermore, it is find out that the contrast of the mask images observed by EUVM influenced by the absorber material. As the result, important information of the finished EUVL mask can be obtained utilizing EUVM, which is very important tool for the finished EUVL mask inspection.

Paper Details

Date Published: 28 August 2003
PDF: 9 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504240
Show Author Affiliations
Takeo Watanabe, Himeji Institute of Technology (Japan)
CREST, JST (Japan)
Tsuneyuki Haga, NTT Corp. (Japan)
Tsutomu Shoki, HOYA Corp. (Japan)
CREST, JST (Japan)
Kazuhiro Hamamoto, Himeji Institute of Technology (Japan)
CREST, JST (Japan)
Shintaro Takada, Himeji Institute of Technology (Japan)
CREST, JST (Japan)
Naoki Kazui, Himeji Institute of Technology (Japan)
CREST, JST (Japan)
Satoshi Kakunai, Himeji Institute of Technology (Japan)
CREST, JST (Japan)
Harushige Tsubakino, Himeji Institute of Technology (Japan)
Hiroo Kinoshita, Himeji Institute of Technology (Japan)
CREST, Japan Science and Technology Corp. (Japan)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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