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Proceedings Paper

Detection capability for chrome defect of tri-tone PSM
Author(s): Jung-Kwan Lee; Dae-Woo Kim; Kyong-Mun Shin; Dong-Heok Lee; Jin-Min Kim; Sang-Soo Choi
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Paper Abstract

The semiconductor industry continuously shrink the linewidths and the smaller linewidths are easily affected by the defects. The defects have to be detected to prevent printed images on wafers. This paper will present the detection capability of current inspection machines for chrome defects on attenuated MoSiN layer and simulation results for the effect of chrome defect on attenuated layer. Two inspection machines based on i-line light source were used for comparison of detection capability for chrome defect on attenuated layer. The effect of chrome defect on attenuated MoSiN layer was evaluated with MSM 100 at 248 nm wavelength.

Paper Details

Date Published: 28 August 2003
PDF: 7 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504205
Show Author Affiliations
Jung-Kwan Lee, Photronics-PKL (South Korea)
Dae-Woo Kim, Photronics-PKL (South Korea)
Kyong-Mun Shin, Photronics-PKL (South Korea)
Dong-Heok Lee, Photronics-PKL (South Korea)
Jin-Min Kim, Photronics-PKL (South Korea)
Sang-Soo Choi, Photronics-PKL (South Korea)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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