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Proceedings Paper

Proximity effects for rinse, dry, and etch parameters
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Paper Abstract

As lithography pushes to the nanoline dimensions, even less drastic changes during photoresist processes can have a non-disregarding impact on proximity behavior, thus these changes can affect the optical proximity correction rules and models. In this study, after the descriptions of the modified mechanical method of rinse and dry processes and the model of etch simulation for dense and isolated lines, the impact on proximity behavior is described and analyzed by using the quantitative sensitivity of the pattern collapse and etch properties on the critical dimension. The effect for optical proximity correction rules and the characterization of the mask error enhancement factor are discussed.

Paper Details

Date Published: 28 August 2003
PDF: 6 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504192
Show Author Affiliations
Sang-Kon Kim, Hanyang Univ. (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)
Ho Seob Kim, Sun Moon Univ. (South Korea)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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