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Proceedings Paper

A study of post-exposure baking effect for CAR process in photomask fabrication
Author(s): Dong-Il Park; Sun-Kyu Seo; Woo-Gun Jeong; Eui-Sang Park; Jong-Hwa Lee; Hyuk-Joo Kwon; Jin-Min Kim; Sung-Mo Jung; Sang-Soo Choi
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Paper Abstract

As the requirement of specification on photomask continues to be tightening with advanced logic and memory devices, the combined process of chemically amplified resist (CAR) and high acceleration voltage e-beam writing tool is widely used to meet the resolution and throughput for advance photomask fabrication. It is well known that the post exposure baking (PEB) condition makes serious effect on the characteristic of CAR due to its de-protection reaction with thermal acid catalyzation. In this paper, we present the PEB temperature effect on pattern resolution such as line edge roughness (LER) and proximity effect correction (PEC) latitude that is practical limitation in the combined process of 50 kV writng tool and CAR resist. Our results show that LER and PEC lattitude are strongly dependent on PEB temperature due to resist contrast variation. At higher PEB temperature, increasing the contrast value can reduce the LER and it can increase the optimum PEC latitude.

Paper Details

Date Published: 28 August 2003
PDF: 7 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504187
Show Author Affiliations
Dong-Il Park, Photronics-PKL (South Korea)
Sun-Kyu Seo, Photronics-PKL (South Korea)
Woo-Gun Jeong, Photronics-PKL (South Korea)
Eui-Sang Park, Photronics-PKL (South Korea)
Jong-Hwa Lee, Photronics-PKL (South Korea)
Hyuk-Joo Kwon, Photronics-PKL (South Korea)
Jin-Min Kim, Photronics-PKL (South Korea)
Sung-Mo Jung, Photronics-PKL (South Korea)
Sang-Soo Choi, Photronics-PKL (South Korea)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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