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Proceedings Paper

Comparative study between REAP 200 and FEP171 CAR with 50-kV raster e-beam system for sub-100-nm technology
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Paper Abstract

In this paper, a process established with a positive-tone chemically amplified resist (CAR) from TOK REAP200 and Fujifilm Arch FEP171 and 50kV MEBES system is discussed. This TOK resist is developed for raster scan 50 kV e-beam systems. It has high contrast, good coating characteristics, good dry etch selectivity, and high environmental stability. In the mask industries, the most popular positive tone CAR is FEP171, which is a high activation energy type CAR. REAP (Raster E-beam Advanced Process) 200 is low activation energy type and new acetal protecting polymer. In this study, we compared to these different type resists in terms of contrast, PAB and PEB latitude, resist profile, footing, T-topping, PED stability, LER, Global CDU (Critical Dimension Uniformity) and resolution. The REAP200 Resist obtained 75nm isolated lines and spaces, 90nm dense patterns with vertical profile, and a good stability of delay time.

Paper Details

Date Published: 28 August 2003
PDF: 10 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504186
Show Author Affiliations
Ki-Ho Baik, Etec Systems, Inc., an Applied Materials Co. (United States)
Homer Y. Lem, Etec Systems, Inc., an Applied Materials Co. (United States)
Robert L. Dean, Etec Systems, Inc., an Applied Materials Co. (United States)
Stephen Osborne, Etec Systems, Inc., an Applied Materials Co. (United States)
Mark Mueller, Etec Systems, Inc., an Applied Materials Co. (United States)
Frank E. Abboud, Etec Systems, Inc., an Applied Materials Co. (United States)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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