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Proceedings Paper

Investigation of e-beam sensitive negative-tone chemically amplified resists for binary mask making
Author(s): Mathias Irmscher; Lothar Berger; Dirk Beyer; Joerg Butschke; Peter Dress; Thomas Hoffmann; Peter Hudek; Corinna Koepernik; Martin Tschinkl; Peter Voehringer
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Paper Abstract

Negative-tone chemically amplified resists MES-EN1G (JSR), FEN-270 (Fujifilm ARCH), EN-024M (TOK) and NEB-22 (Sumitomo) were evaluated for binary mask making. The investigations were performed on an advanced tool set comprising a 50kV e-beam writer Leica SB350, a Steag Hamatech hot/cool plate module APB5000, a Steag Hamatech developer ASP5000, an UNAXIS MASK ETCHER III and a SEM LEO1560 with integrated CD measurement option. We investigated and compared the evaluated resists in terms of resolution, e-beam sensitivity, resist profile, post exposure bake sensitivity, CD-uniformity, line edge roughness, pattern fidelity and etch resistance. Furthermore, the influence of post coating delay and post exposure delay in vacuum and air was determined.

Paper Details

Date Published: 28 August 2003
PDF: 12 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504185
Show Author Affiliations
Mathias Irmscher, Institut fuer Mikroelektronik Chips (Germany)
Lothar Berger, STEAG HamaTech AG (Germany)
Dirk Beyer, Leica Microsystems Lithography GmbH (Germany)
Joerg Butschke, Institut fuer Mikroelektronik Chips (Germany)
Peter Dress, STEAG HamaTech AG (Germany)
Thomas Hoffmann, Institut fuer Mikroelektronik Chips (Germany)
Peter Hudek, Leica Microsystems Lithography GmbH (Germany)
Corinna Koepernik, Institut fuer Mikroelektronik Chips (Germany)
Martin Tschinkl, Infineon Technologies AG (Germany)
Peter Voehringer, Institut fuer Mikroelektronik Chips (Germany)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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