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Proceedings Paper

Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production
Author(s): Woo-Gun Jeong; Dong-Il Park; Eui-Sang Park; Sun-Kyu Seo; Hyuk-Joo Kwon; Jin-Min Kim; Sung-Mo Jung; Sang-Soo Choi
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Paper Abstract

For the latest photomask fabrication, better critical dimension (CD) control and pattern fidelity to design size are required. According to the latest ITRS roadmap, masks for the 90 nm technology node should have CD uniformity of 6~8nm (3σ). Moreover, CD control is particularly critical for isolated opaque lines, such as those found in gate layers, whose loading is primarily clear field. The high acceleration voltage electron beam (EB) systems that employ variable shaped beams (VSBs) are used for mask writing due to their high throughput. To minimize write time and fogging effects, and to control mean CD and improve CD uniformity for mask production, it is well known that negative tone resists enable better VSB mask writing system performance. In these circumstances, positive and negative tone chemically amplified resists (CARs), FEP171 (Fuji Films) and FEN270 (Fuji-Films), were evaluated empirically for mask making. We investigated and compared resolution, sensitivity, resist profiles, CD variation vs. exposure dose, proximity effect correction (PEC), fogging effect, pattern fidelity, and so on. Furthermore, write tool data volume and throughput, defect trends, and other process parameters on the positive and negative tone resists were evaluated and compared by applying test patterns.

Paper Details

Date Published: 28 August 2003
PDF: 11 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504184
Show Author Affiliations
Woo-Gun Jeong, Photronics-PKL (South Korea)
Dong-Il Park, Photronics-PKL (South Korea)
Eui-Sang Park, Photronics-PKL (South Korea)
Sun-Kyu Seo, Photronics-PKL (South Korea)
Hyuk-Joo Kwon, Photronics-PKL (South Korea)
Jin-Min Kim, Photronics-PKL (South Korea)
Sung-Mo Jung, Photronics-PKL (United States)
Sang-Soo Choi, Photronics-PKL (South Korea)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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