Share Email Print

Proceedings Paper

The feasibility study of thin Cr film for low process bias
Author(s): Woong-Won Seo; Si-Yeul Yoon; Dong-Il Park; Eui-Sang Park; Jin-Min Kim; Sung-Mo Jeong; Sang-Soo Choi; Han-Sun Cha; K. S. Nam
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

As minimum feature size of device shrink down below 100 nm, the process margin for the mask fabrication reduced dramatically. Mask makers are enlisting equipment and material suppliers in their efforts to achieve wide process margin from existing processes. One of the most promising methods is thinning Cr thickness as low as possible. However, briging the thin Cr blank into mass production line could cuase some problem for advance photomask fabrication using 50 kV electron beam writing tools. In this paper, we verified the feasibility of Cr film ranged from 400 Å to 1000 Å. The results categorized into two sections. At first, we verified the writing property change with thinning Cr thickness and then investigated the etching characteristics. As a result, we found that Cr thickness don't affect writing properties regardless of Cr thickness. However, the thinner Cr blank represented superior etching characteristics to a conventional one. It showed low etching bias and loading effects. From these results, we concluded the thinner Cr blank could not only make the process wider but also improve the mask quality.

Paper Details

Date Published: 28 August 2003
PDF: 8 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504181
Show Author Affiliations
Woong-Won Seo, Photronics-PKL (South Korea)
Si-Yeul Yoon, Photronics-PKL (South Korea)
Dong-Il Park, Photronics-PKL (South Korea)
Eui-Sang Park, Photronics-PKL (South Korea)
Jin-Min Kim, Photronics-PKL (South Korea)
Sung-Mo Jeong, Photronics-PKL (South Korea)
Sang-Soo Choi, Photronics-PKL (South Korea)
Han-Sun Cha, S&S Tech. (South Korea)
K. S. Nam, S&S Tech. (South Korea)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

© SPIE. Terms of Use
Back to Top