Share Email Print
cover

Proceedings Paper

Optical properties of a-Si films for 157-nm lithography
Author(s): SungKwan Kim; YangSoo Kim; Myung-Ah Kang; Jung-Min Sohn; Kwangsoo No
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In our previous study, a-Si thin films were suggested as a passivation layer to prevent the degradation of Si-O-N-F films that were phase shift materials for 157 nm optical lithography. However few studies about the optical properties of a-Si in the deep ultraviolet (DUV) region have been reported. a-Si thin films having thickness of less than 25 nm were deposited using dc magnetron sputtering with a mesh to ensure the uniformity. The thickness, composition and optical properties of a-Si were analyzed with SEM, AES, UV spectroscopy and a VUV spectroscopic ellipsometer. Using the results of spectroscopic ellipsometry (SE) analysis, optical properties, including absorbance, transmittance, optical band gap and optical constants (n, k), of a-Si films with different thickness (11 to approximately 25 nm) were analyzed using the model of EMA(a-Si+SiO)/a-Si (EMA:effective medium approximation). From the SE analysis of a-Si films, we onfirmed that a-Si film with high transmittance in DUV could be used as a passivation layer of Si-O-N-F films.

Paper Details

Date Published: 28 August 2003
PDF: 9 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504180
Show Author Affiliations
SungKwan Kim, Korea Advanced Institute of Science and Technology (South Korea)
YangSoo Kim, Korea Advanced Institute of Science and Technology (South Korea)
Myung-Ah Kang, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)
Kwangsoo No, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

© SPIE. Terms of Use
Back to Top