Share Email Print
cover

Proceedings Paper

Study on exposure contrast of an EUV mask
Author(s): Morio Hosoya; Tsutomu Shoki; Takeru Kinoshita; Noriyuki Sakaya; Osamu Nagarekawa
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The exposure contrast (at wavelength contrast) on an extreme ultraviolet (EUV) mask has been evaluated by an experimental reflectivity measurement and an optical simulation. The experimental contrast showed good agreement with the calculated one for an EUV mask blank with TaBN absorber. The exposure contrast could be precisely estimated for an EUV mask using the simulation. Further, this simulation was used to evaluate the impact of absorber materials (TaBN, Cr and CrN) and 50-nm-thick buffer layers (CrX, SiO2, Ru and C) used to achieve thinner absorber stack. A mask composed of the TaBN absorber and the Cr-based buffer layer showed was the thinnest to achieve thinner absorber stack. A mask composed of the TaBN absorber and the Cr-based buffer layer showed was the thinnest to achieve a contrast of 100, at 81.3-nm. The TaBN absorber and the Cr-based buffer layer were found to be more suitable materials for obtaining lower aspect ratio.

Paper Details

Date Published: 28 August 2003
PDF: 9 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504072
Show Author Affiliations
Morio Hosoya, HOYA Corp. (Japan)
Tsutomu Shoki, HOYA Corp. (Japan)
Takeru Kinoshita, HOYA Corp. (Japan)
Noriyuki Sakaya, HOYA Corp. (Japan)
Osamu Nagarekawa, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

© SPIE. Terms of Use
Back to Top