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Proceedings Paper

Alignment accuracy of LEEPL: image placement error correction
Author(s): Shinichiro Nohdo; Tomonori Motohashi; Nobuo Shimazu; Hiroyuki Nakano; Shinji Omori; Tetsuya Kitagawa; Shigeru Moriya
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Paper Abstract

The placement-error correction for low-energy electron-beam proximity-projection lithography (LEEPL) has been demonstrated to enable the overlay accuracy of 23 nm that meets the requirement for the 65-nm node. The overlay accuracy for LEEPL-ArF mix-and-match lithography has been analyzed, focusing separately on the intra-field error, the inter-field error, and the dynamic fluctuation over different wafers. It has been found that the intra-field error, mainly due to the distortion of a 1x stencil mask, can be effectively corrected for by using the fine deflection of the electron beam, a unique capability of the LEEPL exposure equipment. In addition, the inter-field error can be suppressed by correcting in real time for the magnification error of each chip detected by the die-by-die alignment system. The dynamic variation in the total overlay error is also small, and the overall alignment accuracy is fairly compatible with the preliminary overlay budget.

Paper Details

Date Published: 28 August 2003
PDF: 8 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504067
Show Author Affiliations
Shinichiro Nohdo, Sony Corp. (Japan)
Tomonori Motohashi, Sony Corp. (Japan)
Nobuo Shimazu, LEEPL Corp. (Japan)
Hiroyuki Nakano, Sony Corp. (Japan)
Shinji Omori, Sony Corp. (Japan)
Tetsuya Kitagawa, Sony Corp. (Japan)
Shigeru Moriya, Sony Corp. (Japan)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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