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Proceedings Paper

New chelation clean process for removing gallium from the focused-ion-beam repaired mask
Author(s): Same-Ting Chen; Tzy-Ying Lin; Chue-San Yoo
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Paper Abstract

Repairing mask defects with Focused Ion Beam (FIB) of gallium often results in a gallium-implanted area due to scan. This implanted layer reduces the light transmission by up to 10 ~ 30 percent, depending on the wavelength. This effect of localized transmission loss becomes printable at the extremes of focus-energy matrix of wafer printing. The existing methods for the gallium removal give rise to quartz damage, side-etching or critical dimension (CD) variation. We propose a mild and new gallium-removing clean process. This process is based on the concept of gallium chelation with designed water-soluble polymers attached with several ligands for chelation. After our CHP1011 post-treatment, from 193nm MSM (Microlithography Simulation Microscope) analysis, the intensity of the scanned area can increase from 88% to 97%. The CHP1011 treatment can enhance the intensity of the repair area by 20% and CD by 15% from 193nm MSM simulation.

Paper Details

Date Published: 28 August 2003
PDF: 9 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504063
Show Author Affiliations
Same-Ting Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Tzy-Ying Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chue-San Yoo, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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