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Proceedings Paper

Application of electron-beam induced processes to mask repair
Author(s): Klaus Edinger; Volker A. Boegli; Michael Budach; Ottmar Hoinkis; Bernd Weyrauch; Hans W. P. Koops; Johannes Bihr; Jens Greiser
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Paper Abstract

An electron beam technology for repair of Next Generation Lithography masks is described. Deposition of missing material in clear defects is shown with different material characteristics. Etching of opaque defects is demonstrated. The superiority of the electron beam technology to the well established and widely used focused ion beam techniques is discussed. Electron beam repair avoids the unacceptable transmission loss which is generated by focus ion beam techniques especially for 193 nm and 157 nm lithography by Ga-ion implantation. Shrinking dimensions of printable defects require higher resolution than ion beams allow, which is, however, obtained routinely with electron beam systems. Specially designed lenses having low aberrations provide outstanding better signal to noise ratio than ion beam systems. Results on deposition and etching of NGL mask relevant materials like TaN, SiC, Mo/Si, and silicon dioxide is demonstrated. In general 1 keV electrons and a low electron current were used for the etching processes.

Paper Details

Date Published: 28 August 2003
PDF: 8 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504061
Show Author Affiliations
Klaus Edinger, NaWoTec GmbH (Germany)
Volker A. Boegli, NaWoTec GmbH (Germany)
Michael Budach, NaWoTec GmbH (Germany)
Ottmar Hoinkis, NaWoTec GmbH (Germany)
Bernd Weyrauch, NaWoTec GmbH (Germany)
Hans W. P. Koops, NaWoTec GmbH (Germany)
Johannes Bihr, LEO Elektronenmikroskopie GmbH (Germany)
Jens Greiser, LEO Elektronenmikroskopie GmbH (Germany)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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