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Proceedings Paper

UV light with oxygen treatment of phase shift photoblank for phase and transmission control: applicable to MxSi(1-x)OyN(y-1)
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Paper Abstract

A method based on UV in air environment to improve the stability of the material of the photoreticles throughout cleans repeated over is suggested in this work. A typical aggressive clean was performed on two different Embedded Shifter materials, 193nm Molybdenum-Silicon-Oxy-Nitride (MoSiON) and 193nm Multilayer Silicon Nitride-Titanium Nitride (SiN-TiN). The variation of phase and transmission of each reticle is reported with the number of cleans. Given the appropriate exposure the phase and the transmission of the treated materials were significantly improved. All treated EAPSMs could stand cleans repeated over.

Paper Details

Date Published: 28 August 2003
PDF: 7 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504048
Show Author Affiliations
Christian M. Chovino, DuPont Photomasks, Inc. (United States)
Laurent Dieu, DuPont Photomasks, Inc. (United States)

Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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