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Proceedings Paper

Development of attenuating PSM shifter for F2 and high-transmission ArF lithography
Author(s): Osamu Nozawa; Yuki Shiota; Hideaki Mitsui; Toshiyuki Suzuki; Yasushi Ohkubo; Masao Ushida; Satoshi Yusa; Toshiharu Nishimura; Kenji Noguchi; Shiho Sasaki; Hiroshi Mohri; Naoya Hayashi
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Paper Abstract

A new att-PSM shifter for both F2 and high-transmittance ArF lithography was developed. This shifter consists of SiON / TaHf in stacked layers. SiON for phase shift layer has a moderate transmittance and refractive index, and has sufficient laser durability. The TaHf film, which is a transmittance control layer, was effective as a functional layer in mask dry etching. Adopting the 3 step etching procedure, low damage of the quartz surface and less impact to CD shift was realized. It was confirmed that a new shifter has also sufficient feasibility to the mask inspection and repair process.

Paper Details

Date Published: 28 August 2003
PDF: 12 pages
Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); doi: 10.1117/12.504047
Show Author Affiliations
Osamu Nozawa, HOYA Corp. (Japan)
Yuki Shiota, HOYA Corp. (Japan)
Hideaki Mitsui, HOYA Corp. (Japan)
Toshiyuki Suzuki, HOYA Corp. (Japan)
Yasushi Ohkubo, HOYA Corp. (Japan)
Masao Ushida, HOYA Corp. (Japan)
Satoshi Yusa, Dai Nippon Printing Co., Ltd. (Japan)
Toshiharu Nishimura, Dai Nippon Printing Co., Ltd. (Japan)
Kenji Noguchi, Dai Nippon Printing Co., Ltd. (Japan)
Shiho Sasaki, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 5130:
Photomask and Next-Generation Lithography Mask Technology X
Hiroyoshi Tanabe, Editor(s)

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