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Proceedings Paper

Grating spacing dependence of nonvolatile photorefractive holographic recording in doubly doped LiNbO3 crystals
Author(s): Qianmin Dong; Liren Liu; Xiaolei Zhu; Ruichang Gao; Yanzhi Hu
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Paper Abstract

Grating spacing has great influence on grating formation via electron transport in the conduction band during holographic recording. Grating spacing dependence of two center holographic recording is investigated by writing nonvolatile holograms in doubly doped LiNbO3 crystals. Several types of electron characteristic transport lengths are defined. The effects of electron characteristic transport lengths and oxidation-reduction state on the amplitude of nonvolatile holographic grating are numerically discussed within the range of grating spacing from 0.14μm to 10μm. It is found that the bulk photovoltaic effect is the dominant electron transport mechanism of doubly doped LiNbO3 crystals, while the diffusion effect does have appreciable effect on the grating formation when grating spacing is smaller than 1μm. Theoretical analysis and experimental results confirm that the logarithm of the amplitude of nonvolatile holographic grating Log (δn) increases with increasing grating spacing Λ within region of small grating spacing (Λsmaller than 1μm) and further increasing of grating spacing won’t influence the values of Log (δn) greatly.

Paper Details

Date Published: 21 October 2003
PDF: 9 pages
Proc. SPIE 5206, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications IX, (21 October 2003); doi: 10.1117/12.503991
Show Author Affiliations
Qianmin Dong, Shanghai Institute of Optics and Fine Mechanics (China)
Liren Liu, Shanghai Institute of Optics and Fine Mechanics (China)
Xiaolei Zhu, Shanghai Institute of Optics and Fine Mechanics (China)
Ruichang Gao, Shanghai Institute of Optics and Fine Mechanics (China)
Yanzhi Hu, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 5206:
Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications IX
Francis T. S. Yu; Ruyan Guo; Shizhuo Yin, Editor(s)

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