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Proceedings Paper

Design of high-average-power clean EUV light source based on laser-produced Xenon plasma
Author(s): Akira Endo; Tamotsu Abe; Takashi Suganuma; Yousuke Imai; Hiroshi Someya; Hideo Hoshino; Nakano Masaki; Georg Soumagne; Hiroshi Komori; Yuichi Takabayashi; Hakaru Mizoguchi
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Paper Abstract

Important design factors are evaluated for a high average power, clean EUV light source by laser produced plasma. The basic requirements are high average power, high stability, and long lifetime, and these are closely relating with absorption loss by xenon, repetition rate, and fast ion generation. These subjects are evaluated based on experimental data and analytical model of a laser produced xenon plasma.

Paper Details

Date Published: 7 January 2004
PDF: 7 pages
Proc. SPIE 5196, Laser-Generated and Other Laboratory X-Ray and EUV Sources, Optics, and Applications, (7 January 2004); doi: 10.1117/12.503434
Show Author Affiliations
Akira Endo, Extreme Ultraviolet Lithography System Development Association (Japan)
Tamotsu Abe, Extreme Ultraviolet Lithography System Development Association (Japan)
Takashi Suganuma, Extreme Ultraviolet Lithography System Development Association (Japan)
Yousuke Imai, Extreme Ultraviolet Lithography System Development Association (Japan)
Hiroshi Someya, Extreme Ultraviolet Lithography System Development Association (Japan)
Hideo Hoshino, Extreme Ultraviolet Lithography System Development Association (Japan)
Nakano Masaki, Extreme Ultraviolet Lithography System Development Association (Japan)
Georg Soumagne, Extreme Ultraviolet Lithography System Development Association (Japan)
Hiroshi Komori, Extreme Ultraviolet Lithography System Development Association (Japan)
Yuichi Takabayashi, Extreme Ultraviolet Lithography System Development Association (Japan)
Hakaru Mizoguchi, Extreme Ultraviolet Lithography System Development Association (Japan)


Published in SPIE Proceedings Vol. 5196:
Laser-Generated and Other Laboratory X-Ray and EUV Sources, Optics, and Applications
George A. Kyrala; Jean-Claude J. Gauthier; Carolyn A. MacDonald; Ali M. Khounsary, Editor(s)

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