Share Email Print
cover

Proceedings Paper

Advanced planar LWIR and VLWIR HgCdTe focal plane arrays
Author(s): Muren Chu; Ray H.K. Gurgenian; Shoghig Mesropian; Sevag Terterian; Latika Becker; D. Walsh; S. A. Kokoroski; Mark A. Goodnough; Brett D. Rosner
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The advanced planar ion-implantation-isolated heterojunction process, which utilizes the benefits of both the boron implantation and the heterojunction epitaxy techniques, has been developed and used to produce longwave and very longwave HgCdTe focal plane arrays in the 320v256 format. The wavelength of these arrays ranges from 10.0-17.0μm. The operability of the longwave HgCdTe arrays is typically over 97%. Without anti-reflection coating and with a 60° FOV cold shield, the D* of the 10.0μm array is 9.4x1010cm x (Hz)1/2 x W-1 at 77K. The 14.7μm and 17.0μm very longwave HgCdTe array diodes have excellent reverse characteristics. The detailed characteristics of these arrays are presented.

Paper Details

Date Published: 12 January 2004
PDF: 7 pages
Proc. SPIE 5167, Focal Plane Arrays for Space Telescopes, (12 January 2004); doi: 10.1117/12.503236
Show Author Affiliations
Muren Chu, Fermionics Corp. (United States)
Ray H.K. Gurgenian, Fermionics Corp. (United States)
Shoghig Mesropian, Fermionics Corp. (United States)
Sevag Terterian, Fermionics Corp. (United States)
Latika Becker, U.S. Army Space & Missile Defense Command (United States)
D. Walsh, Lockheed Martin Santa Barbara Focalplane (United States)
S. A. Kokoroski, Lockheed Martin Santa Barbara Focalplane (United States)
Mark A. Goodnough, Lockheed Martin Santa Barbara Focalplane (United States)
Brett D. Rosner, Lockheed Martin Santa Barbara Focalplane (United States)


Published in SPIE Proceedings Vol. 5167:
Focal Plane Arrays for Space Telescopes
Thomas J. Grycewicz; Craig R. McCreight, Editor(s)

© SPIE. Terms of Use
Back to Top