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Proceedings Paper

Fusion-bonded multilayer SOI for MEMS applications
Author(s): Kumaresa Somasundram; David Cole; Cormac McNamara; Anne Boyle; Paul McCann; Claire Devine; Andrew Nevin
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Paper Abstract

In this paper, we have presented the novel method of fabricating multiplayer-stacked SOI (MultiBond). Tight thickness and TTV control was achieved, which allowed the bonding of multiple layers of SOI of up to 4-layer stacks. Investigation of the stress showed that having the handle wafer oxidized at the back significantly reduced the stress by compensating for the buried oxide layers. Study was also made on the effect of incorporating different buried layers on the minority carrier lifetime in the SOI layer. Here, a thermally grown buried oxide layer gave the highest carrier lifetime. We have also investigated the surface defect density with different buried layer materials, and found that samples with tungsten silicide as a buried layer had the highest defect density, while an LPCVD TEOS oxide buried layer showed the lowest level.

Paper Details

Date Published: 24 April 2003
PDF: 8 pages
Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); doi: 10.1117/12.502741
Show Author Affiliations
Kumaresa Somasundram, Analog Devices Belfast Ltd. (United Kingdom)
David Cole, Analog Devices Belfast Ltd. (United Kingdom)
Cormac McNamara, Analog Devices Belfast Ltd. (United Kingdom)
Anne Boyle, Analog Devices Belfast Ltd. (United Kingdom)
Paul McCann, Analog Devices Belfast Ltd. (United Kingdom)
Claire Devine, Analog Devices Belfast Ltd. (United Kingdom)
Andrew Nevin, Analog Devices Belfast Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 5116:
Smart Sensors, Actuators, and MEMS
Jung-Chih Chiao; Vijay K. Varadan; Carles Cané, Editor(s)

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