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Proceedings Paper

Electrical and optical properties of thick Mg2Si films on Si(111)
Author(s): Nickolai G. Galkin; Svetlana V. Vavanova; Andrei M. Maslov; Konstantin N. Galkin
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Paper Abstract

Solid phase multilayer growth technique of magnesium silicide (Mg2Si) films with preliminary formation of templates, allowing to growth the thick (60-100 nm) Mg2Si film, has offered. Optical function data have shown, that thick (60-80 nm) Mg2Si films are the narrow band semiconductor with optical band gap of Egopt = 0.75 eV and two absorption regions with the small state density at 0.75-2.1 eV and large state density at 2.3-6.2 eV on Mg2Si cell, but in the second range about 3.0 electrons on Mg2Si cell participate in formation of electronic structure. The integrated spectra of the dielectric function of Mg2Si have been decomposed into the contributions from four non-interacting harmonic oscillators and the parameters of these oscillators were evaluated. It was established that the third harmonic oscillator (Ep=2.50 eV) with large oscillator strength introduces the main contribution into the dielectric function. The researches of electrical properties of thick magnesium silicide films on silicon also have shown, that they are narrow band semiconductors of p-type conductivity with energy band gap (Egel=0.77 eV), in which the high mobility holes with high rate of their scattering was observed at temperature increase (μ~T-4.0). On temperature dependencies of carrier concentration two activation regions, connected to a generation of carriers through fundamental transition (0.77 eV) and second interband transition with energy 2.78 eV, have been found.

Paper Details

Date Published: 17 June 2003
PDF: 11 pages
Proc. SPIE 5129, Fundamental Problems of Optoelectronics and Microelectronics, (17 June 2003); doi: 10.1117/12.502403
Show Author Affiliations
Nickolai G. Galkin, Institute for Automation and Control Processes (Russia)
Far Eastern State Univ. (Russia)
Far Eastern State Technical Univ. (Russia)
Svetlana V. Vavanova, Institute for Automation and Control Processes (Russia)
Andrei M. Maslov, Institute for Automation and Control Processes (Russia)
Konstantin N. Galkin, Institute for Automation and Control Processes (Russia)
Far Eastern State Univ. (Russia)

Published in SPIE Proceedings Vol. 5129:
Fundamental Problems of Optoelectronics and Microelectronics
Yuri N. Kulchin; Oleg B. Vitrik, Editor(s)

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