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Proceedings Paper

Electrical conductivity of surface phases on silicon
Author(s): Dmitry A. Tsukanov; Sergey V. Ryzhkov; Igor A. Belous; Oleg A. Utas; Victor G. Lifshits
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Paper Abstract

Electrical conductivity of surface phases on silicon have been studied in ultrahigh vacuum at room temperature by four-point probe method. It has been shown that surface conductance of silicon substrate strongly depends on crystal and electronic structure of surface phases, surface morphology and density of atoms involved in surface phases formation. The atom adsorption, structural and morphological transformation lead to changing of long-order structure of surface phases and consequently in decreasing of electrical conductivity. It is shown that surface phases as new ultrathin 2D material presents additional conducting channel on silicon substrate and is believed to be promising in microelectronics technology.

Paper Details

Date Published: 17 June 2003
PDF: 10 pages
Proc. SPIE 5129, Fundamental Problems of Optoelectronics and Microelectronics, (17 June 2003); doi: 10.1117/12.502396
Show Author Affiliations
Dmitry A. Tsukanov, Institute for Automation and Control Processes (Russia)
Sergey V. Ryzhkov, Institute for Automation and Control Processes (Russia)
Far Eastern State Univ. (Russia)
Igor A. Belous, Institute for Automation and Control Processes (Russia)
Vladivostok State Univ. of Economics and Service (Russia)
Oleg A. Utas, Institute for Automation and Control Processes (Russia)
Far Eastern State Univ. (Russia)
Victor G. Lifshits, Institute for Automation and Control Processes (Russia)
Far Eastern State Univ. (Russia)
Vladivostok State Univ. of Economics and Service (Russia)


Published in SPIE Proceedings Vol. 5129:
Fundamental Problems of Optoelectronics and Microelectronics
Yuri N. Kulchin; Oleg B. Vitrik, Editor(s)

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