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Proceedings Paper

Catalytic plasma chemical etching of silicon and silicon dioxide
Author(s): Yu. I. Dikarev; I. S. Surovtsev; S. M. Tsvetkov
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Paper Abstract

It is reported about an activation of processes of plasmochemical etching of silicon, films of silicon dioxide and slices of crystalline piezoelectric quartz by some metals (Ag, Au, Cu, Sn, Pb, Na, K, Ca). The method of a catalytic plasmochemical etching of SiO2 and Si under films of silver has been developed. The anomalously high etching speeds of SiO2 and crystalline piezoelectric quartz (up to 2.5 microns/sec) were obtained. It was found, that the process of a catalytic etching under films Ag has an induction period, which duration depends on treatment ratings and a silver film thickness. The kinetics of the process has been investigated and its physicochemical model is offered.

Paper Details

Date Published: 17 June 2003
PDF: 7 pages
Proc. SPIE 5129, Fundamental Problems of Optoelectronics and Microelectronics, (17 June 2003); doi: 10.1117/12.502394
Show Author Affiliations
Yu. I. Dikarev, Voronezh State Univ. (Russia)
I. S. Surovtsev, Voronezh State Univ. (Russia)
S. M. Tsvetkov, Voronezh State Univ. (Russia)

Published in SPIE Proceedings Vol. 5129:
Fundamental Problems of Optoelectronics and Microelectronics
Yuri N. Kulchin; Oleg B. Vitrik, Editor(s)

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