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Proceedings Paper

Schottky photodiode arrays on the basis of n-Pb1-xSnxTe1-ySey epitaxial layers, lattice-matched with {100}KCl substrates
Author(s): O. N. Tsarenko; A. I. Tkachuk; S. I. Ryabets
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Paper Abstract

The linear photovoltaic infrared sensor arrays have been formed on the basis of high-quality epitaxial layers of Pb1-xSnxTe1-ySey quaternary solid solutions, lattice matched with {100}KCl substrates, by the thermal vacuum deposition technique. Epilayers were grown from bounded volume of (Pb1-vSnv)1-w(Te1-uSeu)w melt-solutions by the liquid phase epitaxy technique at the liquidus temperature of 773 ÷ 873 K. The obtained 2 x 5-element matrix of the infrared photodiodes with the Au/δ-layer/n-Pb0.83Sn0.17Te0.79Se0.21 Schottky barrier at the 170 K, peak wavelength λp approximately 8.2 μm and cutoff wavelength λc approximately 8.8 μm had the zero bias resistance area product R0A=0.09 ÷ 0.22 Ω•cm2, peak quantum efficiency ηλ = 0.34 ÷ 0.45 and peak detectivity * = (0.6 ÷ 1.3)x1010 cm•Hz1/2•W-1.

Paper Details

Date Published: 14 April 2003
PDF: 4 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502295
Show Author Affiliations
O. N. Tsarenko, Vynnychenko's Kirovograd State Pedagogical Univ. (Ukraine)
A. I. Tkachuk, Vynnychenko's Kirovograd State Pedagogical Univ. (Ukraine)
S. I. Ryabets, Vynnychenko's Kirovograd State Pedagogical Univ. (Ukraine)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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