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Proceedings Paper

Chemical dissolution of gallium antimonide in the HNO3-HCl-CH3COOH solutions
Author(s): O. S. Chernyuk; V. N. Tomashik; V. I. Grytsiv; Z. F. Tomashik; V. M. Kashpor
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Paper Abstract

The nature of GaSb dissolution in the mixtures of HNO3-HCl-CH3COOH system in reproducible hydrodynamics conditions has been investigated. The main regularities of chemical etching and polishing of GaSb, Sb and Ga were determined and surfaces of equal etching rates (Gibbs diagrams) were built. The potentials of self-dissolutions of indicated materials in the investigated solutions were studied also. Region of polishing solutions was defined and etchant compositions for chemical dynamic polishing of GaSb were optimized.

Paper Details

Date Published: 14 April 2003
PDF: 5 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502294
Show Author Affiliations
O. S. Chernyuk, Ivan Franko Teachers Training Univ. (Ukraine)
V. N. Tomashik, Institute of Semiconductor Physics (Ukraine)
V. I. Grytsiv, Ivan Franko Teachers Training Univ. (Ukraine)
Z. F. Tomashik, Institute of Semiconductor Physics (Ukraine)
V. M. Kashpor, Ivan Franko Teachers Training Univ. (Ukraine)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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