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Proceedings Paper

Chemical etching of CdTe and CdxHg1-xTe in the H2O2-HJ-tartaric acid solutions
Author(s): Z. F. Tomashik; O. R. Gumenyuk; V. N. Tomashik
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Paper Abstract

Kinetics of physico-chemical interaction of CdTe and CdxHg1-xTe solid solutions in the H2O2-HI-tartaric acid solutions in reproducible hydrodynamics conditions has been investigated. The main regularities of chemical etching and polishing of these semiconductor materials were determined and surfaces of equal etching rates (Gibbs diagrams) were built. Regions of polishing and unpolishing solutions were defined and etchant compositions for chemical dynamic polishing of CdTe and CdxHg1-xTe solid solutions and etching conditions were optimized.

Paper Details

Date Published: 14 April 2003
PDF: 5 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502293
Show Author Affiliations
Z. F. Tomashik, Institute of Semiconductor Physics (Ukraine)
O. R. Gumenyuk, Institute of Semiconductor Physics (Ukraine)
V. N. Tomashik, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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