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Proceedings Paper

Status of molecular beam epitaxy of CdxHg1-xTe
Author(s): A. P. Antsiferov; L. D. Burdina; Vasily S. Varavin; A. K. Gutakovsky; Sergey A. Dvoretsky; V. A. Kartashev; Nikolay N. Mikhailov; D. N. Pridachin; V. G. Remesnik; S. V. Rykhlitskii; I. V. Sabinina; Yuri G. Sidorov; E. V. Spesivtsev; V. P. Titov; V. A. Shvets; M. V. Yakushev; Alexander L. Aseev
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Paper Abstract

New generation of ultra high vacuum set, ultra-fast ellipsometer of high accuracy and automatic system for control of technological processes was produced for reproducibility growth of mercury cadmium telluride (MCT) solid solution heterostructures (Hs's) by molecular beam epitaxy (MBE). This system allows to grow MCT HS's on substrate up to 4" in diameter and used for future development technology of growth on Si substrate. The development of industrially oriented growth MCT HS's MBE on GaAs 2" in diameter is presented. The electrical characteristics of n-type and p-type MCT HS's MBE and uniformity of MCT composition over the surface area is excellent and satisfied for fabricating multielements arrays of high quality infrared devices.

Paper Details

Date Published: 14 April 2003
PDF: 9 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502290
Show Author Affiliations
A. P. Antsiferov, Institute of Semiconductor Physics (Russia)
L. D. Burdina, Institute of Semiconductor Physics (Russia)
Vasily S. Varavin, Institute of Semiconductor Physics (Russia)
A. K. Gutakovsky, Institute of Semiconductor Physics (Russia)
Sergey A. Dvoretsky, Institute of Semiconductor Physics (Russia)
V. A. Kartashev, Institute of Semiconductor Physics (Russia)
Nikolay N. Mikhailov, Institute of Semiconductor Physics (Russia)
D. N. Pridachin, Institute of Semiconductor Physics (Russia)
V. G. Remesnik, Institute of Semiconductor Physics (Russia)
S. V. Rykhlitskii, Institute of Semiconductor Physics (Russia)
I. V. Sabinina, Institute of Semiconductor Physics (Russia)
Yuri G. Sidorov, Institute of Semiconductor Physics (Russia)
E. V. Spesivtsev, Institute of Semiconductor Physics (Russia)
V. P. Titov, Institute of Semiconductor Physics (Russia)
V. A. Shvets, Institute of Semiconductor Physics (Russia)
M. V. Yakushev, Institute of Semiconductor Physics (Russia)
Alexander L. Aseev, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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