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Proceedings Paper

Formation of low-density InAs/InP(001) quantum dot arrays
Author(s): Yuri I. Mazur; Heiko Kissel; Haeyeon Yang; Gregory J. Salamo; Min Xiao
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Paper Abstract

Carrier transfer in low-density InAs/InP dot arrays with a multi-modal dot size distribution is studied by means of steady-state photoluminescence. The transition from saturation of the inter-dot carrier transfer to the unsaturated regime is surely observed by analyzing the shape of the luminescence signal for decreasing excitation densities. We unambiguously show that larger size dots provide a competing but saturable relaxation channel for smaller quantum dot ground states.

Paper Details

Date Published: 14 April 2003
PDF: 7 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502288
Show Author Affiliations
Yuri I. Mazur, Univ. of Arkansas (United States)
Heiko Kissel, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik (Germany)
Haeyeon Yang, Univ. of Arkansas (United States)
Gregory J. Salamo, Univ. of Arkansas (United States)
Min Xiao, Univ. of Arkansas (United States)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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