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Proceedings Paper

Defect structure and diffusion of defects in narrow-gap Hg1-xCdxTe crystals
Author(s): V. V. Bogoboyashchyy
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Paper Abstract

Formation and diffusion of native point defects mercury vacancies and interstitials in Hg1-xCdxTe crystals (x approximately 0.2...0.3) are investigated by optical and galvanomagnetic methods. The reaction constant for the reaction of neutral vacancy formation Hg(L) + VHgx 0 in Hg-saturated Hg1-xCdxTe crystals is determined in the temperature range 200...600°C. It is equal to (formula abailable in paper). Then defect diagrams for equilibrated mercury vacancies in Hg1-x CdxTe crystals of x = 0.215 and x = 0.295 are calculated. The results of calculations have coincided with the data of experiment. Concentration of equilibrated mercury interstitials HgI is estimated by studying mercury thermal diffusion in heterogeneous Te-saturated Hg1-xCdxTe crystals of x = 0.215 and x = 0.295. The reaction constant for the interstitial formation reaction Hg(L) yeilds HgI + 2e' is found for Hg-saturated conditions. It is equal to (formula available in paper) exp (-0.94 eV/kBT)cm-3 for x = 0.215 (formula available in paper). Basing on this data the reaction constant KF" for Frenkel's reaction HgI" + VHg" mutually implies 0 have been also obtained: KF" = 4.66•1046 exp (-2.26 eV/kBT) cm-6 for x = 0.215 and KF = 3.82•1045 exp (-2.19 eV/kBT) cm-6 for x = 0.295. Then total concentration of equilibrated mercury vacancies and interstitials in Hg 0.8Cd 0.2Te crystals have been calculated for Hg-saturated and Te-saturated annealing conditions in the temperature range from 0°C up to a melting point.

Paper Details

Date Published: 14 April 2003
PDF: 11 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502286
Show Author Affiliations
V. V. Bogoboyashchyy, Kremenchuk State Polytechnical Univ. (Ukraine)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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