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Proceedings Paper

Prototype infrared optical sensor and solar cell made of β-FeSi2 thin film
Author(s): Shinan Wang; Naotaka Otogawa; Yasuhiko Fukuzawa; Honglie Shen; Hisao Tanoue; Takeshi Kojima; Yasuhiko Nakayama; Yunosuke Makita
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Paper Abstract

A prototype infrared optical sensor has been fabricated by using a 0.21 μm-thick β-iron disilicide (β-FeSi2) thin film prepared by reactive deposition epitaxy (RDE) on an n-type (100) Si substrate (ρ approximately 1.5 Ωcm). Manganese ions (Mn+) were implanted into the β-FeSi2 thin film as p-type dopants with a total dose of 5.5 x 1018 cm-3. Al and AuSb thin films were metallized on β-FeSi2 and Si surfaces respectively as electrodes. A circle area of the FeSi2 film was left naked as the illumination window. The good diode characteristic confirmed the high quality of the pn junction. The spectroscopic spectrum indicated a clear photoresponse at room temperature. As evaluated by a standard solar simulator, the device provided an open-circuit voltage of voc = 261 mV and a short-circuit current density of Jsc = 3.1 mA/cm2, suggesting a large potential of such devices in solar energy conversion. Rutherford backscattering spectroscopy (RBS) measurements found a large volume of oxygen in the surface of the β-FeSi2 thin film and severe Fe/Si interdiffusion at the silicide-Si interface. These unwanted effects may be responsible for the unideal device performance. Methods to solve these problems are discussed including a proposal of an all-iron-silicide structure.

Paper Details

Date Published: 14 April 2003
PDF: 8 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502278
Show Author Affiliations
Shinan Wang, National Institute of Advanced Industrial Science & Technology and Japan Science & Technology Corp. (Japan)
Naotaka Otogawa, National Institute of Advanced Industrial Science & Technology and Japan Science & Technology Corp. (Japan)
Yasuhiko Fukuzawa, National Institute of Advanced Industrial Science & Technology and Japan Science & Technology Corp. (Japan)
Honglie Shen, National Institute of Advanced Industrial Science & Technology and Japan Science & Technology Corp. (Japan)
Hisao Tanoue, National Institute of Advanced Industrial Science & Technology (Japan)
Takeshi Kojima, National Institute of Advanced Industrial Science & Technology (Japan)
Yasuhiko Nakayama, National Institute of Advanced Industrial Science & Technology and Japan Science & Technology Corp. (Japan)
Yunosuke Makita, National Institute of Advanced Industrial Science & Technology and Japan Science & Technology Corp. (Japan)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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